Raytheon’s GaN Technology Advances Radar
February 16, 2011
Raytheon’s [RTN] gallium nitride (GaN) technology advances are ready to bring radars to the next level, a
company official said.
“Compared to gallium arsenide, the semiconductor workhorse of the industry for almost 20 years now, GaN
offers cost, value, weight and power advantages,” Colin Whelan, Advanced Technology, Raytheon Integrated Defense
Systems, said in a recent briefing. “Gallium Nitride can produce five or 10 times the power in the same size that
gallium arsenide can do.”
For the military that requires the highest possible performance while keeping systems affordable, the technology
could potentially be a game changer--offering a way to reduce costs by getting the same performance from a smaller
radar or keeping the same size radar and achieving more performance. In some cases there would be reductions in the
logistics tail as well.
Since the early 1990s, Raytheon has invested its own funds to explore and advance GaN technology. The
company has also received funds from government entities such as the Defense Advanced Research Projects Agency
through its wideband gap semiconductor program to advance the technology.
Since Raytheon builds radars that run the gamut from very large to very small and all have transmit/
receive modules in common, it kept its eye on GaN development even as it matured the current gallium arsenide
technology.
GaN development has paid off in the commercial world in areas such as Blu-ray DVD players and in LEDs.
At the radar system level--assuming GaN produces about five times the power of gallium arsenide, Whelan
said, a search radar “with GaN with five times the power we can see 50 percent further out with other changes to the
radar.”
Also, if the same performance in a radar was required, inserting gallium nitride could reduce the size of that
radar by 50 percent.
“That offers tremendous cost savings and also allows us to fit radar into space we previously couldn’t,” he said.
In 2009, Raytheon released the process into production and is able to insert the wafers into systems. Today, Raytheon
has a four-inch GaN process in place in house producing the wafers. “We have all the process, design tools and models
in place to build these circuits, to predict their performance even before we build them,” Whelan said.
The company has also demonstrated monolithic microwave integrated circuits (MMIC) operating at gigahertz
frequencies. “We’ve done that for very high power very efficiently across a broad frequency range as low as one
gigahertz all the way up to nearly 100 gigahertz,” he said.
Whelan said in particular for electronic warfare GaN offers a unique advantage that is to develop high-power
and high efficiency over a very wide bandwidth. That’s been something very challenging in the world of gallium
arsenide and gallium nitride allows up to really readily do that.
Raytheon has also demonstrated the needed reliability to insert the technology into radar systems, modules
and arrays.
The company development focus was to increase the size and maturity of the technology.
“Every time we increased the size of the wafer by one inch we doubled the amount of surface area we get out
of that wafer,” Whelan said. “We essentially halve the cost of the circuit every time we make the transition from two
inch- to three inch- to four inch-wafer.
While gallium arsenide is still a useful technology and will remain in use for some time, Raytheon is looking at
the next generation of GaN technology for use at even higher frequencies than the range of radar and communications
systems it can now advance.
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